| PART |
Description |
Maker |
| NDL7910P NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
|
NEC
|
| NDL7513P_00 NDL7513P NDL7513P1 NDL7513P1C NDL7513P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1310 nm OTDR APPLICATION
|
NEC[NEC]
|
| NDL7408P_00 NDL74081KC NDL74082KC NDL7408P1K NDL74 |
1310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER
|
CEL[California Eastern Labs]
|
| NX7660JC-BA NX8563LB NX7460LE NX7660JC NX7660JC-CA |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION InGaAsP的应变直流异质结激光二极管模块1 625纳米遥测应用
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| KLT-231412 |
1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-155451 |
1550nm InGaAsP strained MQW for FP-LD 1.5mm ball lens TO CAN
|
KODENSHI KOREA CORP.
|
| NX7663JB-BC-AZ NX7663JB-BC |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
CEL[California Eastern Labs]
|
| NDL7565P NDL7565P1C NDL7563P1 NDL7564P NDL7564P1 N |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
NEC Corp.
NEC[NEC]
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
|
NEC
|
| ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725 |
InGaAsP- MQW FP laser diode
InGaAsP-MQW-FP LASER DIODES
InGaAsP - MQW - FP LASER DIODES
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
